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Parameters:

  • Model:2SJ328-Z-E1
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:J328
  • Package:TO-220FL/SM

最大源漏极电压Vds
Drain-Source Voltage
-60V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-20A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.48Ω @-1A,-10V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1.0--2.0V
耗散功率Pd
Power Dissipation
75W
Description & ApplicationsMOS FIELD EFFECT POWER TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE low on-state resistance low Ciss built-in G-S gate protecion diode
描述与应用MOS场效应功率晶体管 开关 P沟道功率MOS FET 工业用途 低通-态电阻 Ciss低 内置G-S门的法律保护二极管

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SJ328-Z-E1
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