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Parameters:

  • Model:2SJ610
  • Manufacturer:HUABAN
  • Date Code:10+rohs 10+ROHS
  • Standard Package:2000
  • Min Order:10
  • Mark/silk print/code/type:J610
  • Package:TO-252/DPAK

最大源漏极电压Vds
Drain-Source Voltage
-250V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-2A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
1.85Ω @-10A,-10V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1.5--3.5V
耗散功率Pd
Power Dissipation
20W
Description & ApplicationsFeatures •Low drain-source ON resistance: RDS (ON) = 1.85 Ω (typ.) •High forward transfer admittance: Yfs = 1.8 S (typ.) • Low leakage current: IDSS = −100 µA (VDS = −250 V) • Enhancement-mode: Vth = −1.5~−3.5 V (VDS = 10 V, ID = 1 mA)
描述与应用•低漏源导通电阻RDS(ON)= 1.85Ω(典型值) •高正向转移导纳:的YFS=1.8 S(典型值) •低漏电流:IDSS=-100μA(VDS=-250 V) •增强模式:VTH=-1.5〜-3.5 V(VDS=10V,ID=1毫安)

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SJ610
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