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Parameters:

  • Model:2SK1467
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:KC
  • Package:SOT-89/SC-62/PCP

最大源漏极电压Vds Drain-Source Voltage 30V
最大栅源极电压Vgs(±) Gate-Source Voltage 15V
最大漏极电流Id Drain Current 8A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance 0.2Ω/Ohm @1A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage 1-2V
耗散功率Pd Power Dissipation 3.5W
Description & Applications N-Channel MOS Silicon FET Very high-speed switching application Low ON resistance Very high-speed switching Low-voltage drive
描述与应用 N沟道MOS硅FET 非常高速开关应用 低导通电阻 非常高的速度开关 低电压驱动

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK1467
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