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Parameters:

  • Model:2SK3980
  • Manufacturer:HUABAN
  • Date Code:05+NOPB
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:LS
  • Package:SOT-89/SC-62/PCP

最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage10V
最大漏极电流Id Drain Current900mA/0.9A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.635Ω/Ohm @500mA,4V
开启电压Vgs(th) Gate-Source Threshold Voltage0.4-1.3V
耗散功率Pd Power Dissipation900mW/0.9W
Description & ApplicationsN-Channel Silicon MOSFET General-Purpose Switching Device Applications Features General-Purpose Switching Device Applications Low ON-resistance Ultrahigh-speed switching 1.8V drive
描述与应用N-沟道硅MOSFET 通用开关设备应用 特性 通用开关设备应用 低导通电阻 超高速开关 1.8V驱动

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK3980
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