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Parameters:

  • Model:2SK690
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:M
  • Package:SOT-89

最大源漏极电压Vds
Drain-Source Voltage
10V
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-6V
漏极电流(Vgs=0V)IDSS
Drain Current
150mA-600mA
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-6V
耗散功率Pd
Power Dissipation
1W
Description & ApplicationsHigh Frequency FETs. GaAs N-Channel MES FET. For UHF medium output power amplification. Features . Large collector dissipation PC. . Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
描述与应用高频场效应管。 砷化镓N沟道MES FET。 对于UHF中等输出功率放大。 特点 . 大集电极耗散PC。 . 小功率型封装,允许瘦身套和通过自动插入磁带/盒包装。

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK690
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