| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.25Ω/Ohm @1A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2V |
| 耗散功率Pd Power Dissipation | 10W |
| Description & Applications | Silicon N-Channel MOS FET High speed power switching Features Silicon N-Channel MOS FET High speed power switching Low on-resistance High speed switching Low drive current 4 V gate drive device -Can be driven from 5 V source Suitable for motor drive, DC-DC converter,power switch and solenoid drive |
| 描述与应用 | 硅N沟道MOS FET 高速功率开关 特性 硅N沟道MOS FET 高速功率开关 低导通电阻 高速开关 低驱动电流 4 V栅极驱动装置 可以从5 V电源驱动 适用于电机驱动，DC-DC转换器，电源开关和螺线管驱动 |