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Parameters:

  • Model:3LN01M-TL
  • Manufacturer:HUABAN
  • Date Code:9K05+nopb 05+rohs13400
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:
  • Package:SOT-323/SC-70

最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage10V
最大漏极电流Id Drain Current150mA/0.15A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance2.9Ω/Ohm @80mA,4V
开启电压Vgs(th) Gate-Source Threshold Voltage0.4-1.3V
耗散功率Pd Power Dissipation150mW/0.15W
Description & ApplicationsN-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Silicon N-Channel MOS FET Ultrahigh-Speed Switching Applications Low ON resistance Ultrahigh-speed switching 2.5V drive
描述与应用N-沟道硅MOSFET 超高速开关应用 特性 硅N沟道MOS FET 超高速开关应用 低导通电阻 超高速开关 2.5V驱动

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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3LN01M-TL
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