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Parameters:

  • Model:3SK126-O
  • Manufacturer:HUABAN
  • Date Code:11+ROHS 11+ROHS
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:UC
  • Package:SOT-143/SOT-24/SC-61

最大源漏极电压Vds Drain-Source Voltage15V
最大栅源极电压Vgs(±) Gate-Source Voltage9V
最大漏极电流Id Drain Current30mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage-1-1/-0.5-1
耗散功率Pd Power Dissipation150mW/0.15W
Description & ApplicationsTOSHIBA FIELD EFFECT TRANSISTOR SILICON A CHANNEL DUAL GATE MOS TYPE Features Silicon N-Channel MOS FET TV TUNER,VHF RF AMPLIFIER APPLICATIONS TV TUNER VHF MIXER APPLICATIONS Superior cross modulation performance Low reverse transfer capacitance Low noise figure
描述与应用东芝场效应晶体管的硅频道双栅MOS型 特性 硅N沟道MOS FET 电视调谐器,甚高频射频放大器应用 电视调谐器甚高频混频器应用 高级交叉调制性能 低反向传输电容 低噪声系数

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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3SK126-O
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