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Parameters:

  • Model:3SK186FI
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:FI
  • Package:SOT-143/MPAK-4

最大源漏极电压Vds Drain-Source Voltage12V
最大栅源极电压Vgs(±) Gate-Source Voltage10V
最大漏极电流Id Drain Current35mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage0.5--0.8V
耗散功率Pd Power Dissipation100mW/0.1W
Description & ApplicationsSilicon N-Channel Dual Gate MOS FET Features Silicon N-Channel Dual Gate MOS FET UHF TV tuner RF amplifier
描述与应用硅N沟道双栅MOS FET 特性 硅N沟道双栅MOS FET UHF电视调谐器RF放大器

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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3SK186FI
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