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Parameters:

  • Model:5HN01M
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:YC
  • Package:SOT-323/SC-70

最大源漏极电压Vds Drain-Source Voltage50V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current100mA/0.1A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage1-2.4V
耗散功率Pd Power Dissipation150mW/0.15W
Description & ApplicationsN-channel Silicon MOSFET General -Purpose Switching Device Application Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive.
描述与应用N沟道硅MOSFET 通用开关设备应用程序 •低导通电阻。 •超高速开关。 •4V驱动器

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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5HN01M
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