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  • Model:74AUP1G00GM
  • Manufacturer:HUABAN
  • Date Code:06+NOPB 06+ROHS
  • Standard Package:5000
  • Min Order:10
  • Mark/silk print/code/type:PA
  • Package:XSON6

逻辑类型
Logic Type
与非门 NAND Gate
电路数
Number of Circuits
1
输入数
Number of Inputs
2
电源电压Vcc
Voltage - Supply
0.8V~3.6V
静态电流Iq
Current - Quiescent (Max)
1uA
输出高,低电平电流
Current - Output High, Low
-8mA,8mA
低逻辑电平
Logic Level - Low
0.7V~0.9V
高逻辑电平
Logic Level - High
1.6V~2V
传播延迟时间@Vcc,CL
Max Propagation Delay @ V, Max CL
6.5ns @ 3V ~ 3.6V,30pF
Description & ApplicationsLow-power 2-input NAND gate;FEATURES Wide supply voltage range from 0.8 V to 3.6 V High noise immunity Complies with JEDEC standards: JESD8-12 (0.8 V to 1.3 V) JESD8-11 (0.9 V to 1.65 V) JESD8-7 (1.2 V to 1.95 V) JESD8-5 (1.8 V to 2.7 V) JESD8-B (2.7 V to 3.6 V) ESD protection: HBM JESD22-A114-C Class 3A. Exceeds 5000 V MM JESD22-A115-A exceeds 200 V CDM JESD22-C101-C exceeds 1000 V Low static power consumption; ICC = 0.9 µA (maximum) Latch-up performance exceeds 100 mA per JESD 78 Class II Inputs accept voltages up to 3.6 V Low noise overshoot and undershoot < 10 % of VCC IOFF circuitry provides partial Power-down mode operation Multiple package options Specified from −40 °C to +85 °C and −40 °C to +125 °C
描述与应用低功耗2输入与非门;特性 宽电源电压范围从0.8 V到3.6 V 高抗干扰 符合JEDEC标准: JESD8-12(0.8 V至1.3 V) JESD8-11(0.9 V至1.65 V) JESD8-7(1.2 V至1.95 V) JESD8-5(1.8 V到2.7 V) JESD8-B(2.7 V至3.6 V) ESD保护: HBM JESD22-A114-C3A级。超过5000 V MM JESD22-A115-A超过200 V CDM JESD22-C101-C超过1000 V 低静态功耗ICC=0.9μA(最大) 闭锁性能超过100 mA每JESD 78 II类 接受输入电压为3.6 V 低噪音冲和下冲

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