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Parameters:

  • Model:AF1332NUL
  • Manufacturer:HUABAN
  • Date Code:06+NOPB
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:2J2
  • Package:SOT-323/SC-70

最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage6V
最大漏极电流Id Drain Current600mA/0.6A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.6Ω/Ohm @600mA,4.5V
开启电压Vgs(th) Gate-Source Threshold Voltage0.5-1.2V
耗散功率Pd Power Dissipation350mW/0.35W
Description & ApplicationsN-Channel Enhancement Mode Power MOSFET Description The advanced power MOSFET provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. Features Simple Gate Drive 2KV ESD Rating (Per MIL-STD-883D) Small Package Outline (SOT323)
描述与应用N沟道增强模式功率MOSFET 描述 先进的功率MOSFET提供设计师 快速切换的最佳组合,低 导通电阻和成本效益。 简单的栅极驱动器 2KV ESD额定值(每MIL-STD-883D) 小型封装(SOT323

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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AF1332NUL
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