| 最大源漏极电压Vds Drain-Source Voltage |
20v |
| 最大栅源极电压Vgs(±) Gate-Source Voltage |
±8v |
| 最大漏极电流Id Drain Current |
5.8a |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
RDS(ON) < 42mΩ (VGS = 1.8V) |
| 开启电压Vgs（th） Gate-Source Threshold Voltage |
|
| 耗散功率Pd Power Dissipation |
1w |
| Description & Applications |
*N-Channel Enhancement Mode Field Effect Transistor. *The AO3408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AO3408L (Green Product) is offered in a lead -free package. |
| 描述与应用 |
* N沟道增强型场效应晶体管。 * AO3408采用先进沟道技术，提供出色的RDS（ON），低栅极电荷和操作与栅极电压可低至1.8V。这个装置是适合用于作为负载开关或PWM应用。 AO3408L（绿色产品）提供无铅封装。 |