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Parameters:

  • Model:AO6604
  • Manufacturer:HUABAN
  • Date Code:04+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:F4GD
  • Package:SOT-163/SOT23-6/TSOP6

最大源漏极电压Vds
Drain-Source Voltage
20V/-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
8V
最大漏极电流Id
Drain Current
3.4A/-2.5A
源漏极导通电阻Rds
Drain-Source On-State Resistance
72mΩ@ VGS = 1.8V,ID =2A
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.4~1V
耗散功率Pd
Power Dissipation
1.15W
Description & ApplicationsComplementary Enhancement Mode Field Effect Transistor General Description The AO6604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6602 is Pb-free (meets ROHS & Sony 259 specifications). AO6604L is a Green Product ordering option. AO6604 and AO6604L are electrically identical.
描述与应用互补增强模式场效应晶体管 概述 AO6604采用先进沟道技术,提供优良的RDS(ON)和栅极电荷低。互补MOSFET形成一个高速的逆变电源,适合多种应用。标准产品AO6602是无铅(符合ROHS& 索尼259规格)。 AO6604L是一种绿色产品订购选项。 AO6604和AO6604L是电动相同。

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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AO6604
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