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  • Model：AP9916H
  • Manufacturer：HUABAN
  • Date Code：05+
  • Standard Package：700
  • Min Order：10
  • Mark/silk print/code/type：9916H
  • Package：TO-252/D-PAK

最大源漏极电压Vds Drain-Source Voltage18V
最大栅源极电压Vgs(±) Gate-Source Voltage12V
最大漏极电流Id Drain Current3.5A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.025Ω/Ohm,@6A,4.5V
开启电压Vgs（th） Gate-Source Threshold Voltage0.5-1V
耗散功率Pd Power Dissipation50W
Description & ApplicationsAdvanced Power N-CHANNEL ENHANCEMENT MODE POWER MOSFET The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP70T03GJ) are available for low-profile applications.
描述与应用高级电源 N沟道增强模式 功率MOSFET 先进的功率MOSFET提供从APEC 设计师与快速切换的最佳组合， 坚固耐用的设备设计，低导通电阻和成本效益。 该TO-252包装普遍首选的所有commercialindustrial表面贴装应用，适用于低电压 诸如DC/ DC转换器的应用程序。通孔版本（AP70T03GJ）可用于低配置应用程序

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