最大源漏极电压Vds Drain-Source Voltage | -20V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
最大漏极电流Id Drain Current | -1.8A |
源漏极导通电阻Rds Drain-Source On-State Resistance | 0.108Ω @-1.8A,-4.5V |
开启电压Vgs(th) Gate-Source Threshold Voltage | -0.5--1V |
耗散功率Pd Power Dissipation | 1.259W |
Description & Applications | M293/-1.8A , RDS(ON)=108mΩ(typ.) @ VGS=-4.5V RDS(ON)=135mΩ(typ.) @ VGS=-2.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SOT-23 Package |
描述与应用 | H293/-1.8A, RDS(ON)=108mΩ(典型值)@ VGS=-4.5V RDS(ON)=135mΩ(典型值)@ VGS=-2.5V 超级高密度电池设计极 低RDS(ON) 可靠耐用 SOT-23封装 |