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  • Model:BB301MAW-TL
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:AW
  • Package:SOT-143/MPAK-4

最大源漏极电压Vds Drain-Source Voltage6V
最大栅源极电压Vgs(±) Gate-Source Voltage6V
最大漏极电流Id Drain Current25mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage0.4-1.0V
耗散功率Pd Power Dissipation125mW/0.125W
Description & ApplicationsBuilt in Biasing Circuit MOS FET IC VHF RF Amplifier Features •Built in Biasing Circuit; To reduce using parts cost & PC board space. •Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) •Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. •Provide mini mold packages; MPAK-4(SOT-143Rmod)
描述与应用内置偏置电路MOS FET的IC 甚高频射频放大器 •内置偏置电路降低零部件的成本与PC板空间。 •低噪音特点; (NF= 1.3 dB(典型值),在f=200兆赫) •耐静电; 内置ESD吸收二极管。承受高达200V在C = 200pF,Rs = 0条件。 •提供小型模具包; MPAK-4(SOT-143Rmod)

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BB301MAW-TL
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