| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 45V/-45V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/-100mA |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~450 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 300mV |
| 耗散功率Pc Power Dissipation | 200mW |
| Description & Applications | Features • NPN/PNP general purpose transistor • Low collector capacitance • Low collector-emitter saturation voltage • Closely matched current gain • Reduces number of components and boardspace • No mutual interference between the transistors. APPLICATIONS • General purpose switching and amplification. |
| 描述与应用 | 特点 •NPN/ PNP通用晶体管 •低集电极电容 •低集电极 - 发射极饱和电压 •紧密匹配的电流增益 •组件和boardspace减少 •晶体管之间没有相互干扰。 应用 •通用开关和放大。 |