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Parameters:

  • Model:BC857S
  • Manufacturer:HUABAN
  • Date Code:08+rohs 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:3C
  • Package:SOT-363

V(BR) CBO

Collector-Base Voltage

 -50V

V(BR) CEO

Collector-Emitter Voltage

 -45V
Collector Current(IC)  -100MA/-0.1A
Transtion Frequency(fT)  250MHZ
DC Current Gain(hFE)  200~630

VCE(sat)

Collector-Emitter Saturation Voltage

 -0.65V
Power Dissipation (Pd)  250MW/0.25W
Description & Applications  PNP Silicon AF Transistor Array
 For AF input stages and driver applications
 High current gain
 Low collector-emitter saturation voltage
 Two ( galvanic) internal isolated Transistors
 with good matching in one package
Technical Documentation Download Read Online

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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BC857S
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