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Parameters:

  • Model:BCR135S
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:WJ
  • Package:SOT-363/SC-88/SC70-6

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA
Q1基极输入电阻R1 Input Resistance(R1)10KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)47KΩ/Ohm
Q1电阻比(R1/R2) Q1 Resistance Ratio0.21
Q2基极输入电阻R1 Input Resistance(R1)10KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)47KΩ/Ohm
Q2电阻比(R1/R2) Q2 Resistance Ratio0.21
直流电流增益hFE DC Current Gain(hFE)70
截止频率fT Transtion Frequency(fT)150MHz
耗散功率Pc Power Dissipation250mW/0.25W
Description & ApplicationsFeatures •NPN Silicon Digital Transistor •Switching circuit, inverter, interface circuit,driver circuit •Built in bias resistor (R1=10k , R2=47k ) •For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package
描述与应用特点 •NPN硅数字晶体管 •开关电路,逆变器,接口电路,驱动电路 •内置偏置电阻(R1=10K,R2=47K) •6-PIN封装:两个(电流)的内部隔离晶体管具有良好的匹配在一个封装中

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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BCR135S
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