| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V/-50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/-100mA |
| Q1基极输入电阻R1 Input Resistance(R1) | 4.7KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | |
| Q2基极输入电阻R1 Input Resistance(R1) | 4.7KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | |
| 直流电流增益hFE DC Current Gain(hFE) | 120~630 |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 耗散功率Pc Power Dissipation | 250mW/0.25W |
| Description & Applications | Features •NPN/PNP Silicon Digital Transistor Array •Switching circuit, inverter, interface circuit,driver circuit •Two (galvanic) internal isolated NPN/PNPTransistors in one package •Built in bias resistor (R1=4.7K ) |
| 描述与应用 | 特点 •NPN / PNP硅数字晶体管阵列 •开关电路，逆变器，接口电路，驱动电路 •（电流）的内部分离NPN/ PNPTransistors在一个包 •内置偏置电阻（R1=4.7K） |