集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 32V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 32V |
集电极连续输出电流IC
Collector Current(IC) | 100mA/0.1A |
截止频率fT
Transtion Frequency(fT) | 100MHz |
直流电流增益hFE
DC Current Gain(hFE) | 380~630 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 350mV/0.35V |
耗散功率Pc
Power Dissipation | 250mW/0.25W |
| Description & Applications | • PNP Silicon Epitaxial Planar Transistors • Suited for low level, low noise, low frequency applications in hybrid cicuits. • Low Current, Low Voltage. • As complementary types, BCW60 Series NPN transistors are recommended. |
| 描述与应用 | •PNP硅外延平面型晶体管 •适合于低层次，低噪音，低高频应用在混合cicuits的。 •低电流，低电压。 •互补类型，BCW60系列NPN晶体管建议。 |