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  • Model：BF1102R
  • Manufacturer：HUABAN
  • Date Code：05+nopb 04NOPB
  • Standard Package：3000
  • Min Order：10
  • Mark/silk print/code/type：W2
  • Package：SOT-363/SC70-6

最大源漏极电压Vds
Drain-Source Voltage		7V
最大栅源极电压Vgs(±)
Gate-Source Voltage		6~15V/6~15V
最大漏极电流Id
Drain Current		40mA
源漏极导通电阻Rds
Drain-Source On-State Resistance
开启电压Vgs（th）
Gate-Source Threshold Voltage		0.3~1V
耗散功率Pd
Power Dissipation		200mW/0.2W
Description & ApplicationsDual N-channel dual gate MOS-FETs FEATURES Two low noise gain controlled amplifiers in a single package Specially designed for 5 V applications Superior cross-modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance ratio. APPLICATIONS Gain controlled low noise amplifier for VHF and UHF applications such as television tuners and professional communications equipment.
描述与应用双N沟道双栅MOS场效应管 特点 两个低噪声增益控制放大器，在一个单一的 包 特别设计的5 V应用 高级交叉调制性能在AGC 高正向转移导纳 高正向转移导纳输入电容比。 应用 增益控制的低噪声放大器的VHF和UHF应用如电视调谐器和专业的通信设备。

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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BF1102R
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