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Parameters:

  • Model:BF660W
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:LE
  • Package:SOT-323/SC-70

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
−40V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−30V
集电极连续输出电流IC
Collector Current(IC)
−25mA
截止频率fT
Transtion Frequency(fT)
700MHz
直流电流增益hFE
DC Current Gain(hFE)
30
管压降VCE(sat)
Collector-Emitter SaturationVoltage
耗散功率Pc
PoWer Dissipation
280mW/0.28W
Description & ApplicationsPNP Silicon RF Transistor • For VHF oscillator applications
描述与应用PNP硅射频晶体管 •对于VHF振荡器应用

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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BF660W
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