集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 15V |
集电极连续输出电流IC
Collector Current(IC) | 100mA/0.1A |
截止频率fT
Transtion Frequency(fT) | 5.5GHz |
直流电流增益hFE
DC Current Gain(hFE) | 80 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 1W |
| Description & Applications | NPN 5 GHz wideband transistor DESCRIPTION NPN planar epitaxial transistor mounted in a plastic SOT223 envelope. It features excellent output voltage capabilities, and is primarily intended for use in MATV applications. PNP complement is the BFG31. |
| 描述与应用 | 5 GHz的宽带晶体管NPN 说明 NPN平面外延晶体管装在一个塑料SOT223信封。它具有出色的输出电压能力，主要用于在美亚应用程序中使用。 PNP补充BFG31。 |