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Parameters:

  • Model:BFP67W
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:W67
  • Package:SOT-343

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
12V
集电极连续输出电流IC
Collector Current(IC)
50mA
截止频率fT
Transtion Frequency(fT)
7.5Ghz
直流电流增益hFE
DC Current Gain(hFE)
65~150
管压降VCE(sat)
Collector-Emitter Saturation Voltage
400mV/0.4V
耗散功率Pc
Power Dissipation
200mW/0.2W
Description & ApplicationsNPN Silicon Planar RF Transistor Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies. Features Small feedback capacitance Low noise figure High transition frequency
描述与应用NPN硅平面RF晶体管 应用 低噪声小信号放大器高达2 GHz。这晶体管具有优越的噪声系数和相关增益性能在UHF,VHF和微波频率。 特点 小反馈电容 低噪声系数 高转换频率

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BFP67W
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