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  • Model:BFR106
  • Manufacturer:HUABAN
  • Date Code:05NOPB 05NOPB
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:R7W
  • Package:SOT-23/SC-59

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
15V
集电极连续输出电流IC
Collector Current(IC)
100mA/0.1A
截止频率fT
Transtion Frequency(fT)
5GHz
直流电流增益hFE
DC Current Gain(hFE)
80
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
500mW/0.5W
Description & ApplicationsNPN 5 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is primarily intended for low noise, general RF applications.
描述与应用5 GHz的宽带晶体管NPN 说明 硅NPN平面外延晶体管在一个塑料SOT23信封。它的主要目的是为噪音低,一般的RF应用。

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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BFR106
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