集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 8V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 5V |
集电极连续输出电流IC
Collector Current(IC) | 6.5mA |
截止频率fT
Transtion Frequency(fT) | 2.3GHz |
直流电流增益hFE
DC Current Gain(hFE) | 40 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 30mW |
| Description & Applications | NPN 2 GHz wideband transistor DESCRIPTION NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF low power amplifiers, such as in pocket phones, paging systems, etc.The transistor features low current consumption (100 uA to 1 mA); due to its high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. |
| 描述与应用 | 2 GHz的宽带晶体管NPN 说明 NPN晶体管在一个塑料SOT23信封。 它的主要目的是利用低功耗射频放大器，如在口袋里的手机，传呼系统等。晶体管具有低电流消耗（100uA到1 mA），由于其高转换频率，它还具有优异的宽带性能和低噪声高频率。 |