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Parameters:

  • Model:BLT50
  • Manufacturer:HUABAN
  • Date Code:04+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:BLT50
  • Package:SOT-223/SC-73

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
10V
集电极连续输出电流IC
Collector Current(IC)
500mA/0.5A
截止频率fT
Transtion Frequency(fT)
470MHz
直流电流增益hFE
DC Current Gain(hFE)
25
管压降VCE(sat)
Collector-Emitter Saturation Voltage
7.5V
耗散功率Pc
Power Dissipation
2W
Description & ApplicationsUHF power transistor FEATURES SMD encapsulation Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a SOT223 surface mounted envelope and designed primarily for use in hand-held radio equipment in the 470 MHz communications band.
描述与应用UHF功率晶体管 特点 SMD封装 镀金确保 出色的可靠性。 说明 NPN硅平面外延晶体管封装在一个SOT223表面安装的信封和设计主要用于手持式无线电设备在470 MHz的通信频段。

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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BLT50
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