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Parameters:

  • Model:BSH103
  • Manufacturer:HUABAN
  • Date Code:05/06ROHS 06NOPB4700
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:J3
  • Package:SOT-23/SC-59

最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage8V
最大漏极电流Id Drain Current850mA/0.85A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.4Ω/Ohm @500mA,4.5V
开启电压Vgs(th) Gate-Source Threshold Voltage1V
耗散功率Pd Power Dissipation500mW/0.5W
Description & ApplicationsDMOS Transistor (N-Channel) FEATURES • Very low threshold • High-speed switching • No secondary breakdown • Direct interface to C-MOS, TTL etc.
描述与应用DMOS晶体管(N沟道) •非常低门槛 •高速开关 •无二次击穿 •直接连接到C-MOS,TTL

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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BSH103
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