集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −40V |
集电极连续输出电流IC
Collector Current(IC) | −600mA/- 0.6A |
截止频率fT
Transtion Frequency(fT) | 200MHz |
直流电流增益hFE
DC Current Gain(hFE) | 30 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | -1.6V |
耗散功率Pc
PoWer Dissipation | 250mW/0.25W |
| Description & Applications | silicon planar epitaxial transistors PNP silicon transistor，in a microminiature plastic envelope ，intended for medium power switching and general purpose amplifier application in trick and thin-film circuits |
| 描述与应用 | 硅平面外延晶体管 PNP硅晶体管，在一个超小型的塑料外壳，适用于中等功率开关和通用放大器应用中厚膜和薄膜电路 |