集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | −110V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −100V |
集电极连续输出电流IC
Collector Current(IC) | −100mA/-0.1A |
截止频率fT
Transtion Frequency(fT) | 50~95MHz |
直流电流增益hFE
DC Current Gain(hFE) | 30 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | −250mV/-0.25V |
耗散功率Pc
PoWer Dissipation | 225mW/0.225W |
| Description & Applications | PNP high-voltage transistor High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant |
| 描述与应用 | PNP高电压晶体管 高电压晶体管 PNP硅 特点 •这些器件是无铅，无卤/ BFR免费，并符合RoHS标准 |