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Parameters:

  • Model:BZM55B3V6-TR
  • Manufacturer:HUABAN
  • Date Code:04+ 04+
  • Standard Package:2500
  • Min Order:10
  • Mark/silk print/code/type:
  • Package:Micro MELF-3v6

额定齐纳电压Vz(V)Zener Voltage 最小
min.
3.52V
平均
Typ.
3.6V
最大
max.
3.68V
误差
Tolerance
2%
最大齐纳阻抗Zz(Ω)
Dynamic Impedance
90Ω/ohm
最大反向漏电流IR(uA)
Reverse Current
40uA
最大耗散功率Pd
Power dissipation
500mW/0.5W
Description & ApplicationsSilicon Epitaxial Planar Z–Diodes Very sharp reverse characteristic Low reverse current level Very high stability Low noise
描述与应用硅外延平面Z-二极管 低反向电流水平 高的稳定性 低噪音

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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BZM55B3V6-TR
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