最大源漏极电压Vds
Drain-Source Voltage | -20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 12V |
最大漏极电流Id
Drain Current | -3.5A |
源漏极导通电阻Rds
Drain-Source On-State
Resistance | 97mΩ@ VGS = 2.5V, ID = 3.7A |
开启电压Vgs（th）
Gate-Source Threshold Voltage | -0.6--1V |
耗散功率Pd
Power Dissipation | 2W |
| Description & Applications | P-Channel Enhancement Mode Field Effect Transistor -20V, -3.5A, RDS(ON)= 85mΩ @VGS = -4.5V RDS(ON)= 130mΩ @VGS = -2.5V High dense cell design for extremely low RDS(ON) Rugged and reliable Lead free product is acquired TSOP-6 package |
| 描述与应用 | P沟道增强型场效应晶体管 -20V，3.5A，RDS（ON）=85mΩ@ VGS=-4.5V RDS（ON）=130mΩ@ VGS=-2.5V 高密度电池设计极低的RDS（ON） 坚固可靠 无铅产品可用 TSOP-6封装 |