最大源漏极电压Vds
Drain-Source Voltage | 10V |
栅源极击穿电压V(BR)GS
Gate-Source Voltage | -6V |
漏极电流(Vgs=0V)IDSS
Drain Current | 6mA-60mA |
关断电压Vgs(off)
Gate-Source Cut-off Voltage | -2.5V |
耗散功率Pd
Power Dissipation | 240mW/0.24W |
| Description & Applications | GaAs FET.
Features
. N-channel dual-gate GaAs MES FET
. Depletion mode transistor for tuned small- signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners
. Low noise
. High gain
. Low input capacitance |
| 描述与应用 | 砷化镓场效应管. 特点: N沟道双栅的GaAs MES 场效应管. 耗尽型晶体管调谐小信号应用. 低噪音, 高增益, 低输入电容. |