集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 120V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 80V |
集电极连续输出电流IC
Collector Current(IC) | 500mA/0.5A |
截止频率fT
Transtion Frequency(fT) | 100MHz |
直流电流增益hFE
DC Current Gain(hFE) | 100~300 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 500mV/0.5V |
耗散功率Pc
Power Dissipation | 350mW/0.35W |
| Description & Applications | NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for very high current, general purpose amplifier applications. |
| 描述与应用 | NPN硅晶体管 中央的半导体CMPT3019类型是NPN硅晶体管 由外延平面工艺制造，环氧树脂模压在一个表面贴装封装，非常高的电流，通用放大器应用设计的。 |