| 三极管BJT类型 TYPE | PNP |
| 三极管BJT集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -15V |
| 三极管BJT集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -12V |
| 三极管BJT集电极连续输出电流IC Collector Current(IC) | -3A |
| 三极管BJT截止频率fT Transtion Frequency(fT) | 280MHz |
| 三极管BJT直流电流增益hFE DC Current Gain(hFE) | -500mA |
| 三极管BJT管压降VCE（sat） Collector-Emitter Saturation Voltage | -110~-165mV |
| 二极管DIODE类型 TYPE | 肖特基-单管 SBD-Single |
| 二极管DIODE反向电压VR Reverse Voltage | 15V |
| 二极管DIODE正向整流电流Io Rectified Current | 1A |
| 二极管DIODE正向电压降VF Forward Voltage(Vf) | 350mV |
| 耗散功率Pc Power Dissipation | 900mW |
| Description & Applications | Features • TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode • DC/DC Converter Applications • Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating high-density mounting. • Each device incorporated in the CPH5701 is equivalent to the CPH3106 and to the SBS004, respectively. • Ultrasmall package facilitates miniaturization in end products. |
| 描述与应用 | 特点 •TR：PNP平面外延硅晶体管 SBD：肖特基二极管 •DC / DC转换器应用 •复合型与PNP晶体管和肖特基势垒二极管中包含一个包装促进高密度安装。 •每个注册的移动设备在CPH5701相当于CPH3106和SBS004。 •超小封装，有利于在终端产品的小型化。 |