集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 12V |
集电极连续输出电流IC
Collector Current(IC) | 100mA/0.1A |
截止频率fT
Transtion Frequency(fT) | 6.7Ghz |
直流电流增益hFE
DC Current Gain(hFE) | 90~180 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 800mW/0.8W |
| Description & Applications | NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Applications High gain High cutoff frequency : fT=6.7GHz typ. Small and slim 6-pin package. Large allowable collector dissipation (800mW max) |
| 描述与应用 | NPN平面外延硅晶体管 高频低噪声 放大器的应用 高增益 高截止频率：：FT =6.7GHZ典型。 小巧玲珑的6引脚封装。 允许集电极耗散较大（800mW) |