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Parameters:

  • Model:CPH6318
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:JU
  • Package:SOT-163/SOT23-6/CPH6

最大源漏极电压Vds
Drain-Source Voltage
-12V
最大栅源极电压Vgs(±)
Gate-Source Voltage
8V
最大漏极电流Id
Drain Current
-6A
源漏极导通电阻Rds
Drain-Source On-State Resistance
75mΩ@ VGS = -1.8V, ID = -0.5A
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.3~-1V
耗散功率Pd
Power Dissipation
1.6W
Description & ApplicationsP-Channel MOS Silicon FET High-Speed Switching Applications Features • Low ON-resistance. • High-speed switching. • 1.8V drive.
描述与应用P沟道MOS硅FET 高速开关应用 特点 •低导通电阻。 •高速开关。 •1.8V驱动。

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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CPH6318
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