集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 180V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 160V |
集电极连续输出电流IC
Collector Current(IC) | 600mA/0.6A |
截止频率fT
Transtion Frequency(fT) | 100~300MHz |
直流电流增益hFE
DC Current Gain(hFE) | 80~250 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 200mV/0.2V |
耗散功率Pc
Power Dissipation | 1.2W |
| Description & Applications | SURFACE MOUNT NPN SILICON TRANSISTORS The CENTRAL SEMICONDUCTOR CXT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. |
| 描述与应用 | 表面贴装 NPN硅晶体管 中央半导体CXT5551型硅NPN晶体管由外延平面工艺，环氧树脂模压在一个表面贴装封装，高电压放大器应用设计制造。 |