集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-EmitterVoltage(VCEO) | 60V |
集电极连续输出电流IC
Collector Current(IC) | 500mA/0.5A |
截止频率fT
Transtion Frequency(fT) | 125MHz |
直流电流增益hFE
DC Current Gain(hFE) | 10000 @ 5V,0.1A |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | 1.5V |
耗散功率Pc
Power Dissipation | 2W |
| Description & Applications | • The CENTRAL SEMICONDUCTOR CZTA27 type is a NPN silicon darlington Transistor 。 • Silicon Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain. |
| 描述与应用 | •中央的半导体CZTA27类型是一个NPN硅达林顿晶体管。 •硅达林顿晶体管由外延平面工艺制造，环氧树脂成型的表面贴装封装，设计要求非常高增益的应用。 |