最大源漏极电压Vds
Drain-Source Voltage | -16V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | -10V |
最大漏极电流Id
Drain Current | -2.3A |
源漏极导通电阻Rds
Drain-Source On-State
Resistance | 150mΩ@ VGS = -2.5V, ID = -1.2A |
开启电压Vgs（th）
Gate-Source Threshold Voltage | -0.5~-1.5V |
耗散功率Pd
Power Dissipation | 710mW/0.71W |
| Description & Applications | Power MOSFET Dual SOIC−8 Package Features • High Efficiency Components in a Single SOIC−8 Package • High Density Power MOSFET with Low RDS(on) • Logic Level Gate Drive • SOIC−8 Surface Mount Package,Mounting Information for SOIC−8 Package Provided • Pb−Free Packages are Available Applications • Power Management in Portable and Battery−Powered Products, i.e.:Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones |
| 描述与应用 | 功率MOSFET 双SOIC-8封装 特点 •在一个单一的SOIC-8封装的高效率组件 •高密度的功率MOSFET具有低RDS（ON） •逻辑电平栅极驱动器 •SOIC-8表面贴装封装，安装SOIC-8封装提供的信息 •无铅包可用 应用 •电源管理在便携式和电池供电产品，如：电脑，打印机，PCMCIA卡，蜂窝电话和无绳电话 |