| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V |
| 集电极连续输出电流IC Collector Current(IC) | -70mA |
| 基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 0.21 |
| 直流电流增益hFE DC Current Gain(hFE) | 68 |
| 截止频率fT Transtion Frequency(fT) | 250MHz |
| 耗散功率Pc Power Dissipation | 0.2W/200mW |
| Description & Applications | Feature • SURFACE MOUNT PNP Digital Silicon Transistor • Small surface mounting type. (SC-70/SOT-323) • High current gain. • Suitable for high packing density. • Low colloector-emitter saturation. • High saturation current capability. • Internal isolated PNP transistors in one package. • Built in bias resistor(R1=10kΩ, Typ. ) • Switching circuit, Inverter, Interface circuit, Driver circuit. |
| 描述与应用 | 功能 •表面贴装PNP数字硅晶体管 •小型表面贴装型。 （SC-70/SOT-323） •高电流增益。 •适合高堆积密度。 •的低colloector发射极饱和。 •高饱和电流能力。 •内部孤立的PNP晶体管在一个封装中。 •内置偏置电阻（R1=10kΩ的典型。） •开关电路，逆变器，接口电路，驱动电路。 |