| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V |
| 集电极连续输出电流IC Collector Current(IC) | -100mA/-0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| 电阻比(R1/R2) Resistance Ratio | |
| 直流电流增益hFE DC Current Gain(hFE) | 30 |
| 截止频率fT Transtion Frequency(fT) | 250MHz |
| 耗散功率Pc Power Dissipation | 0.2W/200mW |
| Description & Applications | Feature •Digital transistors (built-in resistor) •The built-in bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. •Only the on / off conditions need to be set for operation, making device design easy. •Higher mounting densities can be achieved. |
| 描述与应用 | 特点 •数字晶体管（内置电阻） •内置的偏置电阻组成的薄膜电阻完全隔离，允许输入的正偏压，寄生效应几乎完全消除。 •只有开/关条件需要设置操作，使装置的设计容易。 •高密度安装就可以实现。 |