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Parameters:

  • Model:EM6K6
  • Manufacturer:HUABAN
  • Date Code:0612+NOPB
  • Standard Package:8000
  • Min Order:100
  • Mark/silk print/code/type:K06
  • Package:SOT-563/EMT6

最大源漏极电压Vds
Drain-Source Voltage
30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
100mA/0.1A
源漏极导通电阻Rds
Drain-Source On-State Resistance
13Ω@ VGS = 2.5V, ID = 1mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.8~1.5V
耗散功率Pd
Power Dissipation
150mW/0.15W
Description & ApplicationsSmall switching (30V, 0.1A) Features 1) Two 2SK3019 transistors in a single EMT package. 2) The MOSFET elements are independent, eliminating interference. 3) Mounting cost and area can be cut in half. 4) Low on-resistance. 5) Low voltage drive (2.5V) makes this device ideal for portable equipment Applications Interfacing, switching (30V, 100mA)
描述与应用小开关(30V,0.1A) 特点 1)两个2SK3019 EMT包装在一个单一的晶体管。 2)MOSFET的元素是独立的,消除干扰。 3)安装成本和面积可减少一半。 4)低导通电阻。 5)低电压驱动(2.5V)使该器件理想用于便携式设备 应用 接口,开关(30V,100mA的)

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EM6K6
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