| Collector-Base Voltage(VCBO) Q1/Q2 |
-50V/50V |
| Collector-Emitter Voltage(VCEO) Q1/Q2 |
-50V/50V |
| Collector Current(IC) Q1/Q2 |
-100mA/100mA |
| Q1 Input Resistance(R1) |
22KΩ/Ohm |
| Q1Base-Emitter Resistance(R2) |
22KΩ/Ohm |
| (R1/R2) Q1 Resistance Ratio |
1 |
| Q2 Input Resistance(R1) |
22KΩ/Ohm |
| Q2 Base-Emitter Resistance(R2) |
22KΩ/Ohm |
| Q2(R1/R2) Q2 Resistance Ratio |
1 |
| DC Current Gain(hFE) |
|
| Transtion Frequency(fT) |
250MHz |
| Pc Power Dissipation |
150mW/0.15W |
| Description & Applications |
Features •Dual Common Base−Collector Bias Resistor Transistors •Both the DTA124E chip and DTC124E chip in a EMT or UMT or SMT package. •Mounting possible with EMT6 or UMT6 or SMT6 automatic mounting machines. •Transistor elements are independent, eliminating interference. •Mounting cost and area can be cut in half. |
| 描述与应用 |
特点 •双共基极 - 集电极偏置电阻晶体管 •无论是DTA124E芯片和DTC124E芯片在EMT或UMT或SMT封装。 •安装与EMT6或UMT6或SMT6的自动安装机器。 •晶体管元素是独立的，消除干扰。 •安装成本和面积可减少一半 |