| Collector-Base Voltage(VCBO) Q1/Q2 |
50V/50V |
| Collector-Emitter Voltage(VCEO) Q1/Q2 |
50V/50V |
| Collector Current(IC) Q1/Q2 |
100mA/100MA |
| Q1 Input Resistance(R1) |
4.7KΩ/Ohm |
| Q1 Base-Emitter Resistance(R2) |
|
| Q1(R1/R2) Q1 Resistance Ratio |
|
| Q2 Input Resistance(R1) |
4.7KΩ/Ohm |
| Q2Base-Emitter Resistance(R2) |
|
| Q2(R1/R2) Q2 Resistance Ratio |
|
| DC Current Gain(hFE) Q1/Q2 |
100~600/100~600 |
| Transtion Frequency(fT) Q1/Q2 |
250MHz/250MHZ |
| Power Dissipatio Q1/Q2 |
150mW/0.15W |
| Description & Applications |
Features •General purpose (dual digital transistors) •Two DTC143T chips in a EMT or UMT package |
| 描述与应用 |
特点 •通用（双数字晶体管） •两个DTC143T的一个EMT或UMT包的芯片 |