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Parameters:

  • Model:FC115
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:115
  • Package:SOT-153/SOT23-5

V(BR) CBO

Collector-Base Voltage

 -50V

V(BR) CEO

Collector-Emitter Voltage

 -50V
Collector Current(IC)  -100ma
 Input Resistance(R1)  10KΩ
Base-Emitter Resistance(R2)  10KΩ
Base-Emitter Input Resistance Ratio (R1/R2)  1
DC Current Gain(hFE)  50
Transtion Frequency(fT)  200MHZ
Power Dissipation (Pd)  0.2W
Description & Applications  Features•PNP Epitaxial Planar Silicon Composite Transistor•On-chip bias resistors (R1=10kΩ, R2=10kΩ)•Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.•The FC115 is formed with two chipe
Technical Documentation Download Read Online

 

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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FC115
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