| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 25V/-20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 15V/-15V |
| 集电极连续输出电流IC Collector Current(IC) | 50mA/-50mA |
| 截止频率fT Transtion Frequency(fT) | 3000MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 60~200/20~100 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 200mW |
| Description & Applications | Features • NPN/PNP Epitaxial Planar Silicon Transistor • High-speed switching,high-frequency amp application • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. • The FC154 is formed with two chips, being equivalent to the 2SA1699/2SC4270 placed in one package. |
| 描述与应用 | 特点 •NPN / PNP平面外延硅晶体管 •高速开关，高频放大器的应用 •复合型中包含2个晶体管CP包装目前在使用，大大提高了安装效率。 •FC154两个芯片组成，即相当于2SA1699/2SC4270放置在一个包装 |