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Parameters:

  • Model:FDC6333C
  • Manufacturer:HUABAN
  • Date Code:06+NOPB1500
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:333
  • Package:SOT-163/SOT23-6/SSOT-6

最大源漏极电压Vds
Drain-Source Voltage
30V/-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
16V/25V
最大漏极电流Id
Drain Current
8A/-8A
源漏极导通电阻Rds
Drain-Source On-State Resistance
150mΩ@ VGS = 4.5V, ID =2A/220mΩ@ VGS = -4.5V, ID = -1.7A
开启电压Vgs(th)
Gate-Source Threshold Voltage
1~3V/-1~-3V
耗散功率Pd
Power Dissipation
960mW/0.96W
Description & Applications30V N & P-Channel PowerTrench MOSFETS General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Applications · DC/DC converter · Load switch · LCD display inverter Features · Low gate charge · High performance trench technology for extremely low RDS(ON). · SuperSOT –6 package
描述与应用30V N&P沟道的PowerTrench MOSFET 概述    这些N&P沟道MOSFET的生产采用飞兆半导体先进的PowerTrench进程,已特别是针对减少通态电阻,同时保持出色的开关性能。    这些设备已设计提供特殊功耗在一个非常小的空间更大更昂贵的SO-8和TSSOP-8封装的应用中是不切实际的。 应用 ·DC/ DC转换器 ·负荷开关 ·液晶显示器逆变器 特点 ·低栅极电荷 ·高性能沟道技术极低的RDS(ON)。 ·-6包装的SuperSOT

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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FDC6333C
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